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1/11 november 2002 stp45nf3ll - stp45nf3llfp STB45NF3LL n-channel 30v - 0.014 w - 45a to-220 - to220fp - d 2 pak stripfet ii? power mosfet (1) starting t j =25c,i d = 22.5a, v dd =24v n typical r ds (on) = 0.014 w @4.5v n optimal rds(on) x qg trade-off @ 4.5v n conduction losses reduced n switching losses reduced n add suffix t4 for ordering in tape & reel description this application specific power mosfet is the third genaration of stmicroelectronics unique single feature size ? strip-based process. the resulting transistor shows the best trade-off be- tween on-resistance ang gate charge. when used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. this is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance. applications n specifically designed and optimised for high efficiency dc/dc converters absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d stp45nf3ll stp45nf3llfp STB45NF3LL 30 v 30 v 30 v <0.018 w <0.018 w <0.018 w 45 a 45 a 27 a symbol parameter value unit to-220/d 2 pa k to-220fp v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 16 v i d drain current (continuous) at t c = 25c 45 27 a i d drain current (continuous) at t c = 100c 32 19 a i dm ( ) drain current (pulsed) 180 108 a p tot total dissipation at t c = 25c 70 25 w derating factor 0.46 0.167 w/c e as (1) single pulse avalanche energy 241 mj viso insulation withstand voltage (dc) -- 2500 v t stg storage temperature C55to175 c t j max. operating junction temperature d 2 pak 1 3 1 2 3 to-220 1 2 3 to-220fp internal schematic diagram
stp45nf3ll - STB45NF3LL 2/11 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 d 2 pak to-220fp rthj-case thermal resistance junction-case max 2.14 6 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 1v r ds(on) static drain-source on resistance v gs =10v,i d = 22.5 a 0.014 0.018 w v gs = 4.5v, i d = 22.5 a 0.016 0.020 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15 v , i d =22.5a 20 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 800 pf c oss output capacitance 250 pf c rss reverse transfer capacitance 60 pf
3/11 stp45nf3ll - STB45NF3LL electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15v,i d = 22.5a r g = 4.7 w v gs =4.5v (resistive load, see fig. 3) 17 ns t r rise time 100 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v,i d = 45a, v gs =5v 12.5 4.6 5.2 17 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15v, i d = 22.5a, r g =4.7 w, v gs = 4.5v (resistive load, see fig. 3) 20 21 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 45 a i sdm (2) source-drain current (pulsed) 180 a v sd (1) forward on voltage i sd = 45a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45a, di/dt = 100a/s, v dd =15v,t j = 150c (see test circuit, figure 5) 35 44 2.5 ns nc a safe operating area for to-220/d2pak thermal impedance for to-220/d2pak
stp45nf3ll - STB45NF3LL 4/11 thermal impedance for to-220fp safe operating area for to-220fp transconductance static drain-source on resistance transfer characteristics output characteristics
5/11 stp45nf3ll - STB45NF3LL source-drain diode forward characteristics normalized breakdown voltage vs tj normalized on resistance vs temperature normalized gate thereshold voltage vs temp. gate charge vs gate-source voltage capacitance variations
stp45nf3ll - STB45NF3LL 6/11 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/11 stp45nf3ll - STB45NF3LL dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp45nf3ll - STB45NF3LL 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/11 stp45nf3ll - STB45NF3LL 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
stp45nf3ll - STB45NF3LL 10/11 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/11 stp45nf3ll - STB45NF3LL information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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